产品中心
产品中心
首页
>
日本 特瑞仕
>
功率MOSFET
- 产品概况
- 产品特点
-
The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.In order to counter static, a gate protect diode is built-in.
封装
(输出形式)
订货单位品名 绝对额定值 电特性 Vgs(OFF)(V) Ciss(pF) 驱动电压(V) Vdss(V) Vdss(V) ld(A) Rds(ON)(Ω) Vgs=1.5V Vgs=2.5V Vgs=4.5V Vgs=10V TYP. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MIN. MAX. SOT-89(Sing le)
1000pcs/ReelXP161A11A1PR 30 ±20 4 - - - 0.45 0.075 0.11 0.05 0.065 1 2.5 270 4.5 XP161A1265PR 20 ±12 4 - - 0.07 0.3 0.042 0.06 - - 0.7 1.4 320 2.5 XP161A1355PR 30 ±8 4 0.1 0.15 0.05 0.14 0.037 0.05 - - 0.5 1.2 390 1.5 -
Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V
: Rds(on)=0.105Ω@ Vgs=4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
