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The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package.
应用:
●笔记本中的电源管理
●便携式设备
●电池供电系统
●负荷开关
●差示扫描量热仪
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● RDS(ON)≦29mΩ@VGS=4.5V
● RDS(ON)≦42mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability