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台湾 松木 MOS管
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SOT-23
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The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
机械数据：
●低RDS的高密度单元设计（开）
●电压控制小信号切换。
●坚固可靠。
●高饱和电流能力。
●高速切换。
●非热失控。
●焊接温度和时间不得超过260℃，持续时间不得超过10秒。
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● Simple Drive Requirement
● Small Package Outline
● ROHS Compliant
● ESD Rating = 2000V HBM
